The MJ21193 and MJ21194 utilize Perforated Emitter technology and are

specifically designed for high power audio output, disk head positioners and linear

applications.

• Total Harmonic Distortion Characterized

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

250

Vdc

Collector–Base Voltage

VCBO

400

Vdc

Emitter–Base Voltage

VEBO

5

Vdc

Collector–Emitter Voltage – 1.5 V

VCEX

400

Vdc

Collector Current — Continuous

IC

16

30

Adc

Base Current — Continuous

IB

5

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25

°C

PD

250

1.43

Watts

W/

°C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to +200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.7

°C/W

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

VCEO(sus)

250

—

—

Vdc

Collector Cutoff Current

(VCE = 200 Vdc, IB = 0)

ICEO

—

—

100

µAdc

(1) Pulse Test: Pulse Width = 5

µs, Duty Cycle ≤10%.

(continued)

CASE 1–07

TO–204AA

(TO–3)

SCHEMATIC

1

BASE

EMITTER 2

CASE 3

1

BASE

EMITTER 2

CASE 3

PNP

NPN

®

MJ21193G/MJ21194G

© 2006 Thinki Semiconductor Co., Ltd.

http://www.thinkisemi.com/

Page 1/5

Rev.05

Pb

MJ21193G/MJ21194G

250 Watt Silicon Type Metal Package Power Transistor

Pb Free Plating Product