NCV7420

www.onsemi.com

2

MARKING DIAGRAM

NCV7420−x

AWLYWWG

1

14

NCV7420 = Specific Device Code

−x

= −3 = NCV7420D23G

A

= Assembly Location

WL

= Wafer Lot

Y

= Year

WW

= Work Week

G

= Pb−Free Package

Table 1. KEY TECHNICAL CHARACTERISTICS − 3.3 V version

Symbol

Parameter

Min

Typ

Max

Unit

Nominal battery operating voltage (Note 1)

5

12

26

V

Load dump protection (Note 2)

45

Supply current in sleep mode

20

mA

(Note 4)

3.23

3.30

3.37

V

3.19

3.30

3.41

50

mA

Operating DC voltage on WAKE pin

0

V

Maximum rating voltage on WAKE pin

−45

45

Junction thermal shutdown temperature

165

195

°C

Operating junction temperature

−40

+150

°C

Table 2. KEY TECHNICAL CHARACTERISTICS − 5 V version

Symbol

Parameter

Min

Typ

Max

Unit

Nominal battery operating voltage (Note 1)

6

12

26

V

Load dump protection

45

Supply current in sleep mode

20

mA

(Note 4)

4.9

5.0

5.1

V

4.83

5.0

5.17

50

mA

Operating DC voltage on WAKE pin

0

V

Maximum rating voltage on WAKE pin

−45

45

Junction thermal shutdown temperature

165

195

°C

Operating junction temperature

−40

+150

°C

specifications as required by SAE J2602. It is ensured by the battery monitoring circuit.

2. The applied transients shall be in accordance with ISO 7637 part 1, test pulse 5. The device complies with functional class C; class A can

be reached depending on the application and external conditions.

3. Thermal aspects of the entire end−application have to be taken into account in order to avoid thermal shutdown of NCV7420.

Table 3. THERMAL CHARACTERISTICS

Symbol

Parameter

Conditions

Value

Unit

Thermal resistance junction−to−ambient, 1S0P PCB (Note 5)

free air

140

K/W

Thermal resistance junction−to−ambient, 2S2P PCB (Note 6)

free air

80

K/W

5. Test board according to EIA/JEDEC Standard JESD51−3, signal layer with 20% trace coverage

6. Test board according to EIA/JEDEC Standard JESD51−7, signal layers with 20% trace coverage