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2SK1600 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1600 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK1600 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 800 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 4.3 5.0 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 100 uA VSD Diode Forward Voltage IF=3A; VGS=0 2.0 V tr Rise time VGS=10V;ID=1.5A;RL=267Ω 25 50 ns ton Turn-on time 40 60 ns tf Fall time 40 80 ns toff Turn-off time 150 300 ns PDF pdfFactory Pro www.fineprint.cn |
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