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4X16E83V Datasheet(PDF) 10 Page - List of Unclassifed Manufacturers

Part No. 4X16E83V
Description  4 MEG x 16 EDO DRAM
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Maker  ETC [List of Unclassifed Manufacturers]
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10
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
-5
-6
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS
NOTES
EDO-PAGE-MODE READ or WRITE cycle time
tPC
20
25
ns
34
EDO-PAGE-MODE READ-WRITE cycle time
tPRWC
47
56
ns
34
Access time from RAS#
tRAC
50
60
ns
RAS# to column-address delay time
tRAD
9
12
ns
15
Row address hold time
tRAH
7
10
ns
RAS# pulse width
tRAS
50
10,000
60
10,000
ns
RAS# pulse width (EDO PAGE MODE)
tRASP
50
125,000
60
125,000
ns
RAS# pulse width during Self Refresh
tRASS
100
100
µs
Random READ or WRITE cycle time
tRC
84
104
ns
RAS# to CAS# delay time
tRCD
11
14
ns
14, 28
READ command hold time (referenced to CAS#)
tRCH
0
0
ns
16, 30
READ command setup time
tRCS
0
0
ns
28
Refresh period
tREF
64
64
ms
22, 23
Refresh period (Self Refresh)
tREF
128
128
ms
23
RAS# precharge time
tRP
30
40
ns
RAS# to CAS# precharge time
tRPC
5
5
ns
RAS# precharge time exiting Self Refresh
tRPS
90
105
ns
READ command hold time (referenced to RAS#)
tRRH
0
0
ns
16
RAS# hold time
tRSH
13
15
ns
35
READ-WRITE cycle time
tRWC
116
140
ns
RAS# to WE# delay time
tRWD
67
79
ns
18
WRITE command to RAS# lead time
tRWL
13
15
ns
Transition time (rise or fall)
tT2
50
2
50
ns
WRITE command hold time
tWCH
8
10
ns
35
WRITE command hold time (referenced to RAS#)
tWCR
38
45
ns
WE# command setup time
tWCS
0
0
ns
18, 28
WE# to outputs in High-Z
tWHZ
12
15
ns
WRITE command pulse width
tWP
5
5
ns
WE# pulse widths to disable outputs
tWPZ
10
10
ns
WE# hold time (CBR Refresh)
tWRH
8
10
ns
WE# setup time (CBR Refresh)
tWRP
8
10
ns
4 MEG x 16
EDO DRAM




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