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4X16E83V Datasheet(PDF) 7 Page - List of Unclassifed Manufacturers

Part No. 4X16E83V
Description  4 MEG x 16 EDO DRAM
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Maker  ETC [List of Unclassifed Manufacturers]
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7
ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Relative to VSS ................ -1V to +4.6V
Voltage on NC, Inputs or I/O Pins
Relative to VSS ....................................... -1V to +4.6V
Operating Temperature, TA (ambient)
Commercial ......................................... 0°C to +70°C
Extended (IT) ................................. -40°C to +85°C**
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ................................................... 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Note: 1) (VCC = +3.3V ±0.3V)
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS NOTES
SUPPLY VOLTAGE
VCC
3
3.6
V
INPUT HIGH VOLTAGE:
Valid Logic 1; All inputs, I/Os and any NC
VIH
2VCC + 0.3
V
35
INPUT LOW VOLTAGE:
Valid Logic 0; All inputs, I/Os and any NC
VIL
-0.3
0.8
V
35
INPUT LEAKAGE CURRENT:
Any input at VIN (0V
VIN
VCC + 0.3V);
II
-2
2
µA
36
All other pins not under test = 0V
OUTPUT HIGH VOLTAGE:
IOUT = -2mA
VOH
2.4
V
OUTPUT LOW VOLTAGE:
IOUT = 2mA
VOL
0.4
V
OUTPUT LEAKAGE CURRENT:
Any output at VOUT (0V
VOUT
VCC + 0.3V);
IOZ
-5
5
µA
DQ is disabled and in High-Z state
4 MEG x 16
EDO DRAM
<_
<_
<_
<_




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