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4X16E83VTW-6 Datasheet(PDF) 9 Page - List of Unclassifed Manufacturers

Part No. 4X16E83VTW-6
Description  4 MEG x 16 EDO DRAM
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Maker  ETC [List of Unclassifed Manufacturers]
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9
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
-5
-6
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS
NOTES
Access time from column address
tAA
25
30
ns
Column-address setup to CAS# precharge
tACH
12
15
ns
Column-address hold time (referenced to RAS#)
tAR
38
45
ns
Column-address setup time
tASC
0
0
ns
28
Row-address setup time
tASR
0
0
ns
28
Column address to WE# delay time
tAWD
42
49
ns
18
Access time from CAS#
tCAC
13
15
ns
29
Column-address hold time
tCAH
8
10
ns
28
CAS# pulse width
tCAS
8
10,000
10
10,000
ns
30, 32
CAS# LOW to “Don?t Care” during Self Refresh
tCHD
15
15
ns
CAS# hold time (CBR Refresh)
tCHR
8
10
ns
4, 31
Last CAS# going LOW to first CAS# to return HIGH
tCLCH
5
5
ns
31
CAS# to output in Low-Z
tCLZ
0
0
ns
29
Data output hold after CAS# LOW
tCOH
3
3
ns
CAS# precharge time
tCP
8
10
ns
13, 33
Access time from CAS# precharge
tCPA
28
35
ns
29
CAS# to RAS# precharge time
tCRP
5
5
ns
31
CAS# hold time
tCSH
38
45
ns
31
CAS# setup time (CBR Refresh)
tCSR
5
5
ns
4, 28
CAS# to WE# delay time
tCWD
28
35
ns
18, 28
WRITE command to CAS# lead time
tCWL
8
10
ns
31
Data-in hold time
tDH
8
10
ns
19, 29
Data-in setup time
tDS
0
0
ns
19, 29
Output disable
tOD
0
12
0
15
ns
24, 25
Output enable time
tOE
12
15
ns
20
OE# hold time from WE# during
tOEH
8
10
ns
25
READ-MODIFY-WRITE cycle
OE# HIGH hold time from CAS# HIGH
tOEHC
5
10
ns
OE# HIGH pulse width
tOEP
5
5
ns
OE# LOW to CAS# HIGH setup time
tOES
4
5
ns
Output buffer turn-off delay
tOFF
0
12
0
15
ns
17, 24, 29
OE# setup prior to RAS# during HIDDEN REFRESH cycle
tORD
0
0
ns
CAPACITANCE
(Note: 2)
PARAMETER
SYMBOL
MAX
UNITS
Input Capacitance: Address pins
CI15
pF
Input Capacitance: RAS#, CAS#, WE#, OE#
CI27
pF
Input/Output Capacitance: DQ
CIO
7pF
4 MEG x 16
EDO DRAM




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