IS62C256-70TI datasheet(3/8 Pages) ISSI

Part #	IS62C256-70TI

Description	32K x 8 LOW POWER CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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IS62C256

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

SR072-1E

05/12/99

ISSI®

OPERATING RANGE

Range

Ambient Temperature

VCC

Commercial

0

°C to +70°C

5V

± 10%

Industrial

–40

°C to +85°C

5V

± 10%

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Output Capacitance

VOUT = 0V

10

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25

°C, f = 1 MHz, Vcc = 5.0V.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-45 ns

-70 ns

Symbol

Parameter

Test Conditions

Min. Max.

Unit

ICC1

Vcc Operating

VCC = Max.,

CS = VIL

Com.

—

60

—

60

mA

Supply Current

IOUT = 0 mA, f = 0

Ind.

—

70

—

70

ICC2

Vcc Dynamic Operating

VCC = Max.,

CS = VIL

Com.

—

70

—

65

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

80

—

75

ISB1

TTL Standby Current

VCC = Max.,

Com.

—

5

—

5

mA

(TTL Inputs)

VIN = VIH or VIL

Ind.

—

10

—

10

CS ≥ VIH, f = 0

ISB2

CMOS Standby

VCC = Max.,

Com.

—

0.5

—

0.5

mA

Current (CMOS Inputs)

CS ≥ VCC – 0.2V,

Ind.

—

1.0

—

1.0

VIN

≥ VCC – 0.2V, or

VIN

≤ 0.2V, f = 0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VCC = Min., IOH = –1.0 mA

2.4

—

V

VOL

Output LOW Voltage

VCC = Min., IOL = 2.1 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VCC + 0.5

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VCC

Com.

–2

2

µA

Ind.

–10

10

ILO

Output Leakage

GND

≤ VOUT ≤ VCC,

Com.

–2

2

µA

Outputs Disabled

Ind.

–10

10

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

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