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HY29LV320BT-12 Datasheet(PDF) 1 Page - Hynix Semiconductor |
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HY29LV320BT-12 Datasheet(HTML) 1 Page - Hynix Semiconductor |
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1 / 44 page  KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications n High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation n Ultra-low Power Consumption (Typical/ Maximum Values) – Automatic sleep/standby current: 0.5/5.0 µA – Read current: 9/16 mA (@ 5 MHz) – Program/erase current: 20/30 mA n Top and Bottom Boot Block Versions – Provide one 8 KW, two 4 KW, one 16 KW and sixty-three 32 KW sectors n Secured Sector – An extra 128-word, factory-lockable sector available for an Electronic Serial Number and/or additional secured data n Sector Protection – Allows locking of a sector or sectors to prevent program or erase operations within that sector – Temporary Sector Unprotect allows changes in locked sectors n Fast Program and Erase Times (typicals) – Sector erase time: 0.5 sec per sector – Chip erase time: 32 sec – Word program time: 11 µs – Accelerated program time per word: 7 µs n Automatic Erase Algorithm Preprograms and Erases Any Combination of Sectors or the Entire Chip n Automatic Program Algorithm Writes and Verifies Data at Specified Addresses n Compliant With Common Flash Memory Interface (CFI) Specification – Flash device parameters stored directly on the device – Allows software driver to identify and use a variety of current and future Flash products n Minimum 100,000 Write Cycles per Sector Revision 1.3, May 2002 A[20:0] 21 CE# OE# WE# 16 DQ[15:0] RESET# RY/BY# WP#/ACC LOGIC DIAGRAM n Compatible With JEDEC standards – Pinout and software compatible with single-power supply Flash devices – Superior inadvertent write protection n Data# Polling and Toggle Bits – Provide software confirmation of completion of program and erase operations n Ready/Busy (RY/BY#) Pin – Provides hardware confirmation of completion of program and erase operations n Write Protect Function (WP#/ACC pin) − Allows hardware protection of the first or last 32 KW of the array, regardless of sector protect status n Acceleration Function (WP#/ACC pin) − Provides accelerated program times n Erase Suspend/Erase Resume – Suspends an erase operation to allow reading data from, or programming data to, a sector that is not being erased – Erase Resume can then be invoked to complete suspended erasure n Hardware Reset Pin (RESET#) Resets the Device to Reading Array Data n Space Efficient Packaging – 48-pin TSOP and 63-ball FBGA packages HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory |
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