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HY628100B-E Datasheet(PDF) 6 Page - Hynix Semiconductor |
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HY628100B-E Datasheet(HTML) 6 Page - Hynix Semiconductor |
6 / 10 page HY628100B Series Rev 12 / Apr.2001 5 TIMING DIAGRAM READ CYCLE 1(Note 1,4) READ CYCLE 2(Note 1,2,4) tRC tAA Data Valid Previous Data tOH tOH ADDR Data Out READ CYCLE 3(Note 1,2,4) /CS1 tACS Data Valid tCLZ(3) tCHZ(3) Data Out CS2 Notes: 1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS1 and a high CS2. 2. /OE = VIL 3. Transition is measured + 200mV from steady state voltage. This parameter is sampled and not 100% tested. 4. /CS1 in high for the standby, low for active CS2 in low for the standby, high for active Data Valid High-Z ADDR Data Out tRC /CS1 CS2 /OE tAA tACS tOE tCLZ(3) tOLZ(3) tOH tCHZ(3) tOHZ(3) |
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