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NCP1340B3D1R2G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP1340B3D1R2G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 32 page NCP1340 www.onsemi.com 5 Table 4. ELECTRICAL CHARACTERISTICS: (VCC = 12 V, VHV = 120 V, VFault = open, VFB = 2.4 V, VCS = 0 V, VZCD = 0 V, VFMAX = 0 V, CVCC = 100 nF , CDRV = 1 nF, for typical values TJ = 25°C, for min/max values, TJ is – 40°C to 125°C, unless otherwise noted) Characteristics Conditions Symbol Min Typ Max Unit START−UP AND SUPPLY CIRCUITS Supply Voltage Startup Threshold Discharge Voltage During Line Removal Minimum Operating Voltage Operating Hysteresis Internal Latch / Logic Reset Level Transition from Istart1 to Istart2 dV/dt = 0.1 V/ms VCC increasing VCC decreasing VCC decreasing VCC(on) − VCC(off) VCC decreasing VCC increasing, IHV = 650 mA VCC(on) VCC(X2_reg) VCC(off) VCC(HYS) VCC(reset) VCC(inhibit) 16.0 17.0 8.5 7.5 4.5 0.40 17.0 18.0 9.0 – 5.5 0.70 18.0 19.0 9.5 – 7.5 1.05 V VCC(off) Delay VCC decreasing tdelay(VCC_off) – 30.0 – ms Startup Delay Delay from VCC(on) to DRV Enable tdelay(start) – – 500 ms Minimum Voltage for Start−Up Current Source VHV(MIN) – – 40 V Inhibit Current Sourced from VCC Pin Vcc = 0 V Istart1 0.2 0.5 0.65 mA Start−Up Current Sourced from VCC Pin Vcc = Vcc(on) – 0.5 V Istart2 2.4 3.75 5.0 mA Start−Up Circuit Off−State Leakage Cur- rent VHV = 162.5 V VHV = 325 V VHV = 700 V IHV(off1) IHV(off2) IHV(off3) – – – – – – 15 20 50 mA Supply Current Fault or Latch Skip Mode (excluding FB current) Operating Current VCC = VCC(on) – 0.5 V VFB = 0 V fsw = 50 kHz, CDRV = open ICC1 ICC2 ICC3 0.075 0.185 0.5 0.115 0.230 1.0 0.150 0.315 1.5 mA VCC Overvoltage Protection Threshold VCC(OVP) 27 28 29 V VCC Overvoltage Protection Delay tdelay(VCC_OVP) – 30.0 – ms X2 CAPACITOR DISCHARGE Line Voltage Removal Detection Timer tline(removal) 65 100 135 ms Discharge Timer Duration tline(discharge) 21 32 43 ms Line Detection Timer Duration tline(detect) 21 32 43 ms VCC Discharge Current VCC = 20 V ICC(discharge) 13 18 23 mA HV Discharge Level VHV(discharge) – – 30 V BROWNOUT DETECTION System Start−Up Threshold VHV increasing VBO(start) 107 112 116 V Brownout Threshold VHV decreasing VBO(stop) 93 98 102 V Hysteresis VHV increasing VBO(HYS) 9.0 14 – V Brownout Detection Blanking Time VHV decreasing tBO(stop) 40 70 100 ms GATE DRIVE Rise Time VDRV from 10% to 90% tDRV(rise) – 40 80 ns Fall Time VDRV from 90% to 10% tDRV(fall) – 20 60 ns Current Capability Source Sink IDRV(SRC) IDRV(SNK) – – 500 800 – – mA High State Voltage VCC = VCC(off) + 0.2 V, RDRV = 10 kW VCC = 30 V, RDRV = 10 kW VDRV(high1) VDRV(high2) 8.0 10 – 12 – 14 V Low Stage Voltage VFault = 0 V VDRV(low) – – 0.25 V FEEDBACK Open Pin Voltage VFB(open) 4.9 5.0 5.1 V VFB to Internal Current Setpoint Division Ratio KFB − 4 − – Internal Pull−Up Resistor VFB = 0.4 V RFB 350 400 420 k W |
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