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NCP1340B3D1R2G Datasheet(PDF) 5 Page - ON Semiconductor

Part # NCP1340B3D1R2G
Description  High-Voltage, Quasi-Resonant, Controller Featuring Valley Lock-Out Switching
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1340B3D1R2G Datasheet(HTML) 5 Page - ON Semiconductor

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Table 4. ELECTRICAL CHARACTERISTICS: (VCC = 12 V, VHV = 120 V, VFault = open, VFB = 2.4 V, VCS = 0 V, VZCD = 0 V, VFMAX
= 0 V, CVCC = 100 nF , CDRV = 1 nF, for typical values TJ = 25°C, for min/max values, TJ is – 40°C to 125°C, unless otherwise noted)
Characteristics
Conditions
Symbol
Min
Typ
Max
Unit
START−UP AND SUPPLY CIRCUITS
Supply Voltage
Startup Threshold
Discharge Voltage During Line Removal
Minimum Operating Voltage
Operating Hysteresis
Internal Latch / Logic Reset Level
Transition from Istart1 to Istart2
dV/dt = 0.1 V/ms
VCC increasing
VCC decreasing
VCC decreasing
VCC(on) − VCC(off)
VCC decreasing
VCC increasing, IHV = 650 mA
VCC(on)
VCC(X2_reg)
VCC(off)
VCC(HYS)
VCC(reset)
VCC(inhibit)
16.0
17.0
8.5
7.5
4.5
0.40
17.0
18.0
9.0
5.5
0.70
18.0
19.0
9.5
7.5
1.05
V
VCC(off) Delay
VCC decreasing
tdelay(VCC_off)
30.0
ms
Startup Delay
Delay from VCC(on) to DRV Enable
tdelay(start)
500
ms
Minimum Voltage for Start−Up Current
Source
VHV(MIN)
40
V
Inhibit Current Sourced from VCC Pin
Vcc = 0 V
Istart1
0.2
0.5
0.65
mA
Start−Up Current Sourced from VCC Pin
Vcc = Vcc(on) – 0.5 V
Istart2
2.4
3.75
5.0
mA
Start−Up Circuit Off−State Leakage Cur-
rent
VHV = 162.5 V
VHV = 325 V
VHV = 700 V
IHV(off1)
IHV(off2)
IHV(off3)
15
20
50
mA
Supply Current
Fault or Latch
Skip Mode (excluding FB current)
Operating Current
VCC = VCC(on) – 0.5 V
VFB = 0 V
fsw = 50 kHz, CDRV = open
ICC1
ICC2
ICC3
0.075
0.185
0.5
0.115
0.230
1.0
0.150
0.315
1.5
mA
VCC Overvoltage Protection Threshold
VCC(OVP)
27
28
29
V
VCC Overvoltage Protection Delay
tdelay(VCC_OVP)
30.0
ms
X2 CAPACITOR DISCHARGE
Line Voltage Removal Detection Timer
tline(removal)
65
100
135
ms
Discharge Timer Duration
tline(discharge)
21
32
43
ms
Line Detection Timer Duration
tline(detect)
21
32
43
ms
VCC Discharge Current
VCC = 20 V
ICC(discharge)
13
18
23
mA
HV Discharge Level
VHV(discharge)
30
V
BROWNOUT DETECTION
System Start−Up Threshold
VHV increasing
VBO(start)
107
112
116
V
Brownout Threshold
VHV decreasing
VBO(stop)
93
98
102
V
Hysteresis
VHV increasing
VBO(HYS)
9.0
14
V
Brownout Detection Blanking Time
VHV decreasing
tBO(stop)
40
70
100
ms
GATE DRIVE
Rise Time
VDRV from 10% to 90%
tDRV(rise)
40
80
ns
Fall Time
VDRV from 90% to 10%
tDRV(fall)
20
60
ns
Current Capability
Source
Sink
IDRV(SRC)
IDRV(SNK)
500
800
mA
High State Voltage
VCC = VCC(off) + 0.2 V, RDRV = 10 kW
VCC = 30 V, RDRV = 10 kW
VDRV(high1)
VDRV(high2)
8.0
10
12
14
V
Low Stage Voltage
VFault = 0 V
VDRV(low)
0.25
V
FEEDBACK
Open Pin Voltage
VFB(open)
4.9
5.0
5.1
V
VFB to Internal Current Setpoint Division
Ratio
KFB
4
Internal Pull−Up Resistor
VFB = 0.4 V
RFB
350
400
420
k
W


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