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2N1132 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N1132
Description  LOW POWER PNP SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
Devices
Qualified Level
2N1131
2N1131L
2N1132
2N1132L
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
All Units
Units
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
600
mAdc
Total Power Dissipation
@ TA = +25
0C(1)
@ TC = +25
0C(2)
PT
0.6
2.0
W
W
Operating & Storage Temperature Range
Top, Tj
-65 to +200
°C
1)
Derate linearly 3.4 mW/
0C for TA
≥ +250C
2)
Derate linearly 11.4 mW/
0C for TC
≥ +250C
TO-39*
2N1131, 2N1132
TO-5*
2N1311L, 2N1312L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
40
Vdc
Collector-Base Breakdown Voltage
IC = 10 µAdc
V(BR)CBO
50
Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
100
µAdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc, RBE ≤ 10 ohms
ICER
10
mAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
VCB = 30 Vdc
ICBO
10
1.0
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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