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QID3310006 Datasheet(PDF) 6 Page - Powerex Power Semiconductors |
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QID3310006 Datasheet(HTML) 6 Page - Powerex Power Semiconductors |
6 / 6 page QID3310006 Dual IGBT HVIGBT Module 100 Amperes/3300 Volts 6 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 Rev. 1 Preliminary Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. COLLECTOR EMITTER VOLTAGE, V CES, (VOLTS) 250 200 150 100 50 0 2000 1000 3000 0 250 200 150 100 50 0 REVERSE BIAS SAFE OPERATING AREA (TYPICAL) VCC ≤ 2500V VGE = ±15V RG(off) = 100Ω Tj = 150°C 4000 EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 0 2000 1000 3000 FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) VCC ≤ 2500V di/dt = 1kA/µs Tj = 150°C 4000 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 10-1 10-2 10-3 100 101 0.8 0.6 0.4 0.2 0 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.12°C/W (IGBT) Rth(j-c) = 0.19°C/W (FWDi) |
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