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K4H280438M-TLA0 Datasheet(PDF) 4 Page - Samsung semiconductor |
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K4H280438M-TLA0 Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 53 page - 4 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Contents Revision History General Information 1. Key Features 1.1 Features 1.2 Operating Frequencies 2. Package Pinout & Dimension 2.1 Package Pintout 2.2 Input/Output Function Description 2.3 66 Pin TSOP(II)/MS-024FC Package Physical Dimension 3. Functional Description 3.1 Simplified State Diagram 3.2 Basic Functionality 3.2.1 Power-Up Sequence 3.2.2 Mode Register Definition 3.2.2.1 Mode Register Set(MRS) 3.2.2.2 Extended Mode Register Set(EMRS) 3.2.3 Precharge 3.2.4 No Operation(NOP) & Device Deselect 3.2.5 Row Active 3.2.6 Read Bank 3.2.7 Write Bank 3.3 Essential Functionality for DDR SDRAM 3.3.1 Burst Read Operation 3.3.2 Burst Write Operation 3.3.3 Read Interrupted by a Read 3.3.4 Read Interrupted by a Write & Burst Stop 3.3.5 Read Interrupted by a Precharge 3.3.6 Write Interrupted by a Write 2 9 10 10 10 11 11 12 13 14 14 15 15 16 16 18 19 19 20 20 20 21 21 22 23 23 24 25 |
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