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HFS50N06A Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HFS50N06A Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 7 page Electrical Characteristics T J=25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units I S Continuous Source-Drain Diode Forward Current -- -- 50 A I SM Pulsed Source-Drain Diode Forward Current -- -- 200 V SD Source-Drain Diode Forward Voltage I S = 50 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time I S = 50 A, VGS = 0 V di F/dt = 100 A/ -- 45 -- Qrr Reverse Recovery Charge -- 70 -- BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 60 -- -- V I DSS Zero Gate Voltage Drain Current V DS = 60 V, VGS = 0 V -- -- 1 V DS = 48 V, TJ = 125 -- -- 10 I GSS Gate-Body Leakage Current V GS = 25 V, V DS = 0 V -- -- 100 Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1290 1675 C oss Output Capacitance -- 445 580 C rss Reverse Transfer Capacitance -- 84 110 Dynamic Characteristics t d(on) Turn-On Time V DS = 30 V, ID = 25 A, R G = 25 -- 15 40 t r Turn-On Rise Time -- 105 220 t d(off) Turn-Off Delay Time -- 80 180 t f Turn-Off Fall Time -- 85 180 Q g Total Gate Charge V DS = 48 V, ID = 50 A V GS = 10 V -- 27 34 nC Q gs Gate-Source Charge -- 5.0 -- nC Q gd Gate-Drain Charge -- 10.2 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230 H, I AS=50A, VDD=25V, RG=25 , Starting T J =25 C 3. Pulse Test : Pulse Width 4. Essentially Independent of Operating Temperature On Characteristics V GS Gate Threshold Voltage V DS = VGS, ID = 250 2.0 -- 4.0 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 25 A -- 18 22 m g FS Forward Transconductance V DS = 25 V, ID = 25 A -- 22 -- S |
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