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UNR221Z Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UNR221Z Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 17 page UNR221x Series 2 SJH00010CED ■ Electrical Characteristics T a = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 050 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, I E = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base UNR2210/2215/2216/2217 IEBO VEB = −6 V, IC = 0 0.01 mA cutoff current UNR2213 0.1 (Collector open) UNR2212/2214/221D/ 0.2 221E/221M/221N/221T UNR221Z 0.4 UNR2211 0.5 UNR221F/221K 1.0 UNR2219 1.5 UNR2218/221L/221V 2.0 Forward current UNR221V hFE VCE = 10 V, I C = 5 mA 6 20 transfer ratio UNR2218/221K/221L 20 UNR2219/221D/221F 30 UNR2211 35 UNR2212/221E 60 UNR221Z 60 200 UNR2213/2214/221M 80 UNR221N/221T 80 400 UNR2210*/2215*/2216*/2217* 160 460 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, I B = 0.3 mA 0.25 V UNR221V IC = 10 mA, IB = 1.5 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V Output voltage low-level VOL VCC = 5 V, V B = 2.5 V, R L = 1 kΩ 0.2 V UNR2213/221K VCC = 5 V, VB = 3.5 V, RL = 1 kΩ UNR221D VCC = 5 V, VB = 10 V, RL = 1 kΩ UNR221E VCC = 5 V, V B = 6 V, R L = 1 kΩ Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Input resistance UNR2218 R1 −30% 0.51 +30% k Ω UNR2219 1.0 UNR221M/211V 2.2 UNR2216/221F/221L/ 4.7 221N/221Z UNR2211/2214/2215/221K 10 UNR2212/2217/221T 22 UNR2210/2213/221D/221E 47 Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification |
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