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GB50SLT12-CAL Datasheet(PDF) 3 Page - GeneSiC Semiconductor, Inc. |
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GB50SLT12-CAL Datasheet(HTML) 3 Page - GeneSiC Semiconductor, Inc. |
3 / 5 page Die Datasheet GB50SLT12-CAL Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg3 of 4 Mechanical Parameters Die Dimensions 4.5 x 4.5 mm 2 Anode Pad Size 4.24 x 4.24 Die Area total / active 20.25/17.64 Die Thickness 360 µm Wafer Size 100 mm Flat Position 0 deg Die Frontside Passivation Polyimide Anode Pad Metallization 4000 nm Al Backside Cathode Metallization 400 nm Ni + 200 nm Au Die Attach Electrically conductive glue or solder Wire Bond Al ≤ 380 µm Reject ink dot size Φ ≥ 0.3 mm Recommended storage environment Store in original container, in dry nitrogen, < 6 months at an ambient temperature of 23 °C Chip Dimensions: DIE A [mm] 4.5 B [mm] 4.5 METAL C [mm] 4.24 D [mm] 4.24 WIRE BONDABLE E [mm] 4.2 F [mm] 4.2 |
Similar Part No. - GB50SLT12-CAL_15 |
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Similar Description - GB50SLT12-CAL_15 |
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