Die Datasheet

Feb 2015

http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/

 

Pg3 of 4

 

Mechanical Parameters

Die Dimensions

0.9 x 0.9

mm

2

Anode pad size

0.64 x 0.64

Die Area total / active

0.81/0.36

Die Thickness

360

µm

Wafer Size

100

mm

Flat Position

0

deg

Die Frontside Passivation

Polyimide

Anode Pad Metallization

400 nm Ni + 200 nm Au

Backside Cathode Metallization

400 nm Ni + 200 nm Au

Die Attach

Electrically conductive glue or solder

Wire Bond

Au ≤ 76 µm

Reject ink dot size

Φ ≥ 0.3 mm

Recommended storage environment

Store in original container, in dry nitrogen,

< 6 months at an ambient temperature of 23 °C

Chip Dimensions:

DIE

A

[mm]

0.9

B

[mm]

0.9

METAL

C

[mm]

0.64

D

[mm]

0.64

WIRE

BONDABLE

E

[mm]

0.6

F

[mm]

0.6