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GA50SICP12-227 Datasheet(PDF) 2 Page - GeneSiC Semiconductor, Inc. |
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GA50SICP12-227 Datasheet(HTML) 2 Page - GeneSiC Semiconductor, Inc. |
2 / 13 page GA50SICP12-227 Dec 2015 Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg 2 of 12 Parameter Symbol Conditions Value Unit Notes Free-Wheeling SiC Diode Repetitive peak reverse voltage VRRM 1200 V Continuous forward current IF TC ≤ 115 °C 50 A RMS forward current IF(RMS) TC ≤ 115 °C 87 A Surge non-repetitive forward current, Half Sine Wave IFSM TC = 25 °C, tP = 10 ms TC = 115 °C, tP = 10 ms 350 313 A Non-repetitive peak forward current IF,max TC = 25 °C, tP = 10 µs 1625 A I 2t value ∫i2 dt TC = 25 °C, tP = 10 ms TC = 115 °C, tP = 10 ms 450 300 A 2s Thermal Characteristics Thermal resistance, junction - case RthJC SiC Junction Transistor 0.57 °C/W Fig. 20 Thermal resistance, junction - case RthJC SiC Diode 0.53 °C/W Fig. 21 Section II: Static Electrical Characteristics A: On State B: Off State Section III: Dynamic Electrical Characteristics A: Capacitance and Gate Charge Parameter Symbol Conditions Value Unit Notes Min. Typical Max. Drain – Source On Resistance RDS(ON) ID = 50 A, Tj = 25 °C ID = 50 A, Tj = 150 °C ID = 50 A, Tj = 175 °C 20 36 42 mΩ Fig. 5 Gate – Source Saturation Voltage VGS,SAT ID = 50 A, ID/IG = 40, Tj = 25 °C ID = 50 A, ID/IG = 30, Tj = 175 °C 3.42 3.23 V Fig. 7 DC Current Gain hFE VDS = 8 V, ID = 50 A, Tj = 25 °C VDS = 8 V, ID = 50 A, Tj = 125 °C VDS = 8 V, ID = 50 A, Tj = 175 °C 100 65 58 – Fig. 4 FWD forward voltage VF IF = 50 A, Tj = 25 °C IF = 50 A, Tj = 175 °C 1.4 2.1 1.8 3.0 V Drain Leakage Current IDSS VDS = 1200 V, VGS = 0 V, Tj = 25 °C VDS = 1200 V, VGS = 0 V, Tj = 150 °C VDS = 1200 V, VGS = 0 V, Tj = 175 °C 100 200 500 μA Fig. 8 Gate Leakage Current ISG VSG = 20 V, Tj = 25 °C 20 nA Parameter Symbol Conditions Value Unit Notes Min. Typical Max. Input Capacitance Ciss VGS = 0 V, VDS = 800 V, f = 1 MHz 7770 pF Fig. 9 Reverse Transfer/Output Capacitance Crss/Coss VDS = 1 V, f = 1 MHz VDS = 400 V, f = 1 MHz VDS = 800 V, f = 1 MHz 3370 335 250 pF Fig. 9 Total Output Capacitance Charge Qoss VR = 400 V VR = 800 V 230 345 nC Output Capacitance Stored Energy EOSS VGS = 0 V, VDS = 800 V, f = 1 MHz 100 µJ Fig. 10 Effective Output Capacitance, time related Coss,tr ID = constant, VGS = 0 V, VDS = 0…800 V 430 pF Effective Output Capacitance, energy related Coss,er VGS = 0 V, VDS = 0…800 V 315 pF Gate-Source Charge QGS VGS = -5…3 V 65 nC Gate-Drain Charge QGD VGS = 0 V, VDS = 0…800 V 345 nC Gate Charge - Total QG 410 nC |
Similar Part No. - GA50SICP12-227_15 |
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Similar Description - GA50SICP12-227_15 |
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