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GA50SICP12-227 Datasheet(PDF) 2 Page - GeneSiC Semiconductor, Inc.

Part # GA50SICP12-227
Description  Silicon Carbide Junction Transistor/Schottky Diode Co-Pack
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

GA50SICP12-227 Datasheet(HTML) 2 Page - GeneSiC Semiconductor, Inc.

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GA50SICP12-227
Dec 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
Pg 2 of 12
Parameter
Symbol
Conditions
Value
Unit
Notes
Free-Wheeling SiC Diode
Repetitive peak reverse voltage
VRRM
1200
V
Continuous forward current
IF
TC
≤ 115 °C
50
A
RMS forward current
IF(RMS)
TC
≤ 115 °C
87
A
Surge non-repetitive forward current,
Half Sine Wave
IFSM
TC = 25 °C, tP = 10 ms
TC = 115 °C, tP = 10 ms
350
313
A
Non-repetitive peak forward current
IF,max
TC = 25 °C, tP = 10 µs
1625
A
I
2t value
∫i2 dt
TC = 25 °C, tP = 10 ms
TC = 115 °C, tP = 10 ms
450
300
A
2s
Thermal Characteristics
Thermal resistance, junction - case
RthJC
SiC Junction Transistor
0.57
°C/W
Fig. 20
Thermal resistance, junction - case
RthJC
SiC Diode
0.53
°C/W
Fig. 21
Section II: Static Electrical Characteristics
A: On State
B: Off State
Section III: Dynamic Electrical Characteristics
A: Capacitance and Gate Charge
Parameter
Symbol
Conditions
Value
Unit
Notes
Min.
Typical
Max.
Drain – Source On Resistance
RDS(ON)
ID = 50 A, Tj = 25 °C
ID = 50 A, Tj = 150 °C
ID = 50 A, Tj = 175 °C
20
36
42
Fig. 5
Gate – Source Saturation Voltage
VGS,SAT
ID = 50 A, ID/IG = 40, Tj = 25 °C
ID = 50 A, ID/IG = 30, Tj = 175 °C
3.42
3.23
V
Fig. 7
DC Current Gain
hFE
VDS = 8 V, ID = 50 A, Tj = 25 °C
VDS = 8 V, ID = 50 A, Tj = 125 °C
VDS = 8 V, ID = 50 A, Tj = 175 °C
100
65
58
Fig. 4
FWD forward voltage
VF
IF = 50 A, Tj = 25 °C
IF = 50 A, Tj = 175 °C
1.4
2.1
1.8
3.0
V
Drain Leakage Current
IDSS
VDS = 1200 V, VGS = 0 V, Tj = 25 °C
VDS = 1200 V, VGS = 0 V, Tj = 150 °C
VDS = 1200 V, VGS = 0 V, Tj = 175 °C
100
200
500
μA
Fig. 8
Gate Leakage Current
ISG
VSG = 20 V, Tj = 25 °C
20
nA
Parameter
Symbol
Conditions
Value
Unit
Notes
Min.
Typical
Max.
Input Capacitance
Ciss
VGS = 0 V, VDS = 800 V, f = 1 MHz
7770
pF
Fig. 9
Reverse Transfer/Output Capacitance
Crss/Coss
VDS = 1 V, f = 1 MHz
VDS = 400 V, f = 1 MHz
VDS = 800 V, f = 1 MHz
3370
335
250
pF
Fig. 9
Total Output Capacitance Charge
Qoss
VR = 400 V
VR = 800 V
230
345
nC
Output Capacitance Stored Energy
EOSS
VGS = 0 V, VDS = 800 V, f = 1 MHz
100
µJ
Fig. 10
Effective Output Capacitance,
time related
Coss,tr
ID = constant, VGS = 0 V, VDS = 0…800 V
430
pF
Effective Output Capacitance,
energy related
Coss,er
VGS = 0 V, VDS = 0…800 V
315
pF
Gate-Source Charge
QGS
VGS = -5…3 V
65
nC
Gate-Drain Charge
QGD
VGS = 0 V, VDS = 0…800 V
345
nC
Gate Charge - Total
QG
410
nC


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