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UCC27325P Datasheet(PDF) 10 Page - Texas Instruments

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Part # UCC27325P
Description  DUAL 4-A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

UCC27325P Datasheet(HTML) 10 Page - Texas Instruments

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UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002
10
www.ti.com
APPLICATION INFORMATION
drive current and power requirements
The UCC37323/4/5 family of drivers are capable of delivering 4-A of current to a MOSFET gate for a period of
several hundred nanoseconds. High peak current is required to turn the device ON quickly. Then, to turn the
device OFF, the driver is required to sink a similar amount of current to ground. This repeats at the operating
frequency of the power device. A MOSFET is used in this discussion because it is the most common type of
switching device used in high frequency power conversion equipment.
References 1 and 2 discuss the current required to drive a power MOSFET and other capacitive-input switching
devices. Reference 2 includes information on the previous generation of bipolar IC gate drivers.
When a driver IC is tested with a discrete, capacitive load it is a fairly simple matter to calculate the power that
is required from the bias supply. The energy that must be transferred from the bias supply to charge the capacitor
is given by:
E
+ 1
2
CV2, where C is the load capacitor and V is the bias voltage feeding the driver.
There is an equal amount of energy transferred to ground when the capacitor is discharged. This leads to a
power loss given by the following:
P
+ 2
1
2
CV2f, where f is the switching frequency.
This power is dissipated in the resistive elements of the circuit. Thus, with no external resistor between the driver
and gate, this power is dissipated inside the driver. Half of the total power is dissipated when the capacitor is
charged, and the other half is dissipated when the capacitor is discharged. An actual example using the
conditions of the previous gate drive waveform should help clarify this.
With VDD = 12 V, CLOAD = 10 nF, and f = 300 kHz, the power loss can be calculated as:
P = 10 nF x (12)2 x (300 kHz) = 0.432 W
With a 12-V supply, this would equate to a current of:
I
+ P
V
+ 0.432 W
12 V
+ 0.036 A
The actual current measured from the supply was 0.037 A, and is very close to the predicted value. But, the
IDD current that is due to the IC internal consumption should be considered. With no load the IC current draw
is 0.0027 A. Under this condition the output rise and fall times are faster than with a load. This could lead to an
almost insignificant, yet measurable current due to cross-conduction in the output stages of the driver. However,
these small current differences are buried in the high frequency switching spikes, and are beyond the
measurement capabilities of a basic lab setup. The measured current with 10-nF load is reasonably close to
that expected.


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