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GA05JT12-CAL Datasheet(PDF) 10 Page - GeneSiC Semiconductor, Inc. |
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GA05JT12-CAL Datasheet(HTML) 10 Page - GeneSiC Semiconductor, Inc. |
10 / 12 page Die Datasheet GA05JT12-CAL Feb 2016 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg10 of 11 Section VI: Mechanical Parameters Die Dimensions 1.57 x 1.57 mm2 62 x 62 mil2 Die Area total / active 2.46/1.66 mm2 3820/4271 mil 2 Die Thickness 360 µm 14 mil Wafer Size 100 mm 3937 mil Flat Position 0 deg 0 deg Die Frontside Passivation Polyimide Gate/Source Pad Metallization 4000 nm Al Bottom Drain Pad Metallization 400 nm Ni + 200 nm Au Die Attach Electrically conductive glue or solder Wire Bond Al ≤ 8 mil (Source) Al ≤ 1.25 mil (Gate) Reject ink dot size Φ ≥ 0.3 mm Recommended storage environment Store in original container, in dry nitrogen, < 6 months at an ambient temperature of 23 °C Section VII: Chip Dimensions mm mil DIE A 1.57 62 B 1.57 62 SOURCE WIREBONDABLE C 1.01 40 D 1.01 40 E 0.10 4 F 0.27 11 GATE WIREBONDABLE G 0.18 7 H 0.17 7 A C F E D B G H |
Similar Part No. - GA05JT12-CAL_16 |
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Similar Description - GA05JT12-CAL_16 |
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