Die Datasheet

GA05JT06-CAL

Feb 2015

http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/

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Driving the GA05JT06-CAL

Drive Topology

Gate Drive Power

Consumption

Switching

Frequency

Application Emphasis

Availability

TTL Logic

High

Low

Wide Temperature Range

Coming Soon

Constant Current

Medium

Medium

Wide Temperature Range

Coming Soon

High Speed

– Boost Capacitor

Medium

High

Fast Switching

Production

High Speed

– Boost Inductor

Low

High

Ultra Fast Switching

Coming Soon

Proportional

Lowest

High

Wide Drain Current Range

Coming Soon

Pulsed Power

Medium

N/A

Pulse Power

Coming Soon

A: Static TTL Logic Driving

The GA05JT06-CAL may be driven using direct (5 V) TTL logic after current amplification. The (amplified) current level of the supply must

Figure 9: TTL Gate Drive Schematic

B: High Speed Driving

The SJT is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal gate

current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 10 which features a positive

current peak during turn-on, a negative current peak during turn-off, and continuous gate current to remain on.

Figure 10: An idealized gate current waveform for fast switching of an SJT.

SiC SJT

D

S

G

TTL

Gate Signal

5 / 0 V

TTL i/p

5 V