SI6954DQ datasheet(1/4 Pages) VISHAY

Part #	SI6954DQ

Description	Dual N-Channel 30-V (D-S) MOSFET

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Si6954DQ

Vishay Siliconix

Document Number: 70179

S-49534—Rev. C, 06-Oct-97

www.vishay.com

S FaxBack 408-970-5600

2-1

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

30

0.065 @ VGS = 10 V

"3.9

30

0.095 @ VGS = 4.5 V

"3.1

Si6954DQ

D1

S1

G1

1

2

3

4

8

7

6

5

D2

S2

G2

TSSOP-8

Top View

D

D1

G1

S1

N-Channel MOSFET

D2

G2

S2

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

"3.9

A

Continuous Drain Current (TJ = 150 C)a

TA = 70_C

ID

"3.1

A

Pulsed Drain Current

IDM

"20

A

Continuous Source Current (Diode Conduction)a

IS

1.25

Maximum Power Dissipationa

TA = 25_C

PD

1.0

W

Maximum Power Dissipationa

TA = 70_C

PD

0.64

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambienta

RthJA

125

_C/W

Notes

a.

Surface Mounted on FR4 Board, t

v 10 sec.

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