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CY7C199
Document #: 38-05160 Rev. *A
Page 3 of 13
ISB1
Automatic CE
Power-down Current—
TTL Inputs
Max. VCC,CE>VIH,
VIN>VIHorVIN<VIL,
f = fMAX
Com’l30
30
25
25
mA
L5
5
5
5
mA
ISB2
Automatic CE
Power-down Current—
CMOS Inputs
Max. VCC,
CE > VCC – 0.3V
VIN > VCC – 0.3V or
VIN < 0.3V, f=0
Com’l10
10
10
10
mA
L
0.05
0.05
0.05
0.05
µA
Mil
15
15
15
15
mA
Electrical Characteristics Over the Operating Range (-20, -25, -35, -45) (continued)[3]
Parameter
Description
Test Conditions
7C199-20
7C199-25
7C199-35
7C199-45
Unit
Min. Max. Min. Max. Min. Max.
Min.
Max.
Capacitance[4 ]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
8pF
COUT
Output Capacitance
8
pF
AC Test Loads and Waveforms[5]
Data Retention Characteristics Over the Operating Range (L-version only)
Parameter
Description
Conditions[6]
Min.
Max.
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
Com’l
VCC = VDR = 2.0V, CE > VCC –
0.3V, VIN > VCC – 0.3V or VIN <
0.3V
µA
Com’l L
10
µA
tCDR
[4]
Chip Deselect to Data Retention Time
0
ns
tR
[5]
Operation Recovery Time
200
µs
3.0V
5V
OUTPUT
R1 481
Ω
R2
255
Ω
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
≤t
r
≤t
r
5V
OUTPUT
R1 481
Ω
R2
255
Ω
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
1.73V
Equivalent to:
THÉVENIN EQUIVALENT
ALL INPUT PULSES
167
Ω
Data Retention Waveform
Note:
4.
Tested initially and after any design or process changes that may affect these parameters.
5.
tR< 3 ns for the -12 and the -15 speeds. tR< 5 ns for the -20 and slower speeds
6.
No input may exceed VCC + 0.5V.
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC