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2SD1606 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SD1606
Description  High DC Current Gain
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1606 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Darlington Power Transistor
2SD1606
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA; RBE= ∞
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 6A; IB= 60mA
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
2.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 6A; IB= 60mA
3.5
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
100
μ
A
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
10
μ
A
hFE
DC Current Gain
IC= 3A; VCE= 3V
1000
20000
VECF
C-E Diode Forward Voltage
IF= 6A
3.0
V
Switching times
ton
Turn-on Time
IC= 3A, IB1= -IB2= 6mA
0.6
μ
s
tstg
Storage Time
7.0
μ
s
tf
Fall Time
2.0
μ
s


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