FQD60N03L datasheet(2/11 Pages) FAIRCHILD

Part #	FQD60N03L

Description	N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FQD60N03L Rev. B1

Electrical Characteristics T

C = 25°C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics (V GS = 4.5V)

Switching Characteristics (V

GS = 10V)

Unclamped Inductive Switching

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250µA, VGS = 0V

30

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 25V

-

1

µA

VGS = 0V

TC = 125

oC

-

250

IGSS

Gate to Source Leakage Current

VGS = ±20V

-

±100

nA

VGS(TH)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

1

-

3

V

rDS(ON)

Drain to Source On Resistance

ID = 30A, VGS = 10V

-

0.014

0.023

Ω

ID = 19A, VGS = 4.5V

-

0.024

0.030

CISS

Input Capacitance

VDS = 15V, V GS = 0V,

f = 1MHz

-

900

-

pF

COSS

Output Capacitance

-

210

-

pF

CRSS

Reverse Transfer Capacitance

-

90

-

pF

Qg(TOT)

Total Gate Charge at 10V

VGS = 0V to 10V

VDD = 15V

ID = 19A

Ig = 1.0mA

-

18

28

nC

Qg(5)

Total Gate Charge at 5V

VGS = 0V to 5V

-

9.6

14

nC

Qg(TH)

Threshold Gate Charge

VGS = 0V to 1V

-

1.0

1.5

nC

Qgs

Gate to Source Gate Charge

-

3.4

-

nC

Qgd

Gate to Drain “Miller” Charge

-

3.4

-

nC

tON

Turn-On Time

VDD = 15V, ID = 7.9A

VGS = 4. 5V, RGS = 18 Ω

-

90

ns

td(ON)

Turn-On Delay Time

-

11

-

ns

tr

Rise Time

-

49

-

ns

td(OFF)

Turn-Off Delay Time

-

27

-

ns

tf

Fall Time

-

28

-

ns

tOFF

Turn-Off Time

-

83

ns

tON

Turn-On Time

VDD = 15V, ID = 7.9A

VGS = 10 V, RGS = 18 Ω

-

48

ns

td(ON)

Turn-On Delay Time

-

6

-

ns

tr

Rise Time

-

26

-

ns

td(OFF)

Turn-Off Delay Time

-

52

-

ns

tf

Fall Time

-

28

-

ns

tOFF

Turn-Off Time

-

120

ns

tAV

Avalanche Time

ID = 2.7 A, 3.0 mH

180

-

µs

VSD

Source to Drain Diode Voltage

ISD = 19A

-

1.25

V

ISD = 10A

-

1.0

V

trr

Reverse Recovery Time

ISD = 19A, dISD /dt = 100A/µs

-

58

ns

QRR

Reverse Recovered Charge

ISD = 19A, dISD /dt = 100A/µs

-

70

nC

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