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MTB080P06L3 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTB080P06L3 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 9 page  CYStech Electronics Corp. Spec. No. : C069L3 Issued Date : 2016.03.14 Revised Date : Page No. : 2/9 MTB080P06L3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ VGS=-10V, TA=25 °C -3.3 Continuous Drain Current @ VGS=-10V, TA=70 °C ID -2.6 Pulsed Drain Current *1 IDM -14 Single Pulse Avalanche Current IAS -4 A Avalanche Energy @ L=6mH, ID=-4A, VDD=-15V EAS 48 Repetitive Avalanche Energy @ L=0.05mH *2 EAR 0.5 mJ Total Power Dissipation @TA=25℃ 2.5 Total Power Dissipation @TA=70℃ PD 1.6 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RƟJC 20 Thermal Resistance, Junction-to-ambient, max RƟJA 50 (Note) °C/W Note : Surface mounted on a 1 in 2 pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad. Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -60 - - VGS=0V, ID=-250μA VGS(th) -1 - -2.5 V VDS =VGS, ID=-250μA IGSS - - ± 100 nA VGS=±20V, VDS=0V - - -1 VDS =-60V, VGS =0V IDSS - - -25 μA VDS =-48V, VGS =0V, TJ=85 °C - 90 113 VGS =-10V, ID=-4A RDS(ON) *1 - 117 150 mΩ VGS =-4.5V, ID=-2A GFS *1 - 6 - S VDS =-10V, ID=-3A Dynamic Qg *1, 2 - 11.4 - Qgs *1, 2 - 2.1 - Qgd *1, 2 - 3.2 - nC ID=-4A, VDS=-48V, VGS=-10V td(ON) *1, 2 - 6.4 - tr *1, 2 - 17 - td(OFF) *1, 2 - 25.2 - tf *1, 2 - 7.2 - ns VDS=-30V, ID=-4A, VGS=-10V, RG=3Ω Ciss - 503 - Coss - 54 - Crss - 37 - pF VGS=0V, VDS=-25V, f=1MHz |
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