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MMBT2907A Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MMBT2907A Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 6 page CYStech Electronics Corp. Spec. No. : C305N3 Issued Date : 2002.06.11 Revised Date :2010.07.14 Page No. : 1/ 6 MMBT2907A CYStek Product Specification General Purpose PNP Epitaxial Planar Transistor MMBT2907A Description • The MMBT2907A is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC(Max)= -0.6A • Low VCE(sat), ideal for low-voltage operation. • Complementary to MMBT2222A. • Pb-free package Symbol Outline MMBT2907A SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -0.6 A Power Dissipation Pd 225 mW Thermal Resistance, Junction to Ambient RθJA 556 °C/W Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 °C |
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