Transistors

1

Publication date: May 2003

SJC00048CED

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)

■ Features

• Large collector current I

C

• Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing and the magazine packing

■ Absolute Maximum Ratings T

■ Electrical Characteristics T

a

= 25°C ± 3°C

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SB0710

−30

V

(Emitter open)

2SB0710A

−60

Collector-emitter voltage 2SB0710

−25

V

(Base open)

2SB0710A

−50

Emitter-base voltage (Collector open)

−5V

Collector current

− 0.5

A

Peak collector current

−1A

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Unit: mm

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage

2SB0710

= −10 µA, I

E

= 0

−30

V

(Emitter open)

2SB0710A

−60

Collector-emitter voltage

2SB0710

−25

V

(Base open)

2SB0710A

−50

Emitter-base voltage (Collector open)

−5V

Collector-base cutoff current (Emitter open)

− 0.1

µA

1

2

= −10 V, I

C

= −150 mA

85

340



40



1

− 0.35 − 0.60

V

1

= −300 mA, I

B

= −30 mA

−1.1

−1.5

V

Transition frequency

200

MHz

Collector output capacitance

6

15

pF

(Common base, input open circuited)

Marking Symbol:

• 2SB0710: C

• 2SB0710A: D

Rank

Q

R

S

No-rank

85 to 170

120 to 240

170 to 340

85 to 340

Marking

2SB0710

CQ

CR

CS

C

symbol

2SB0710A

DQ

DR

DS

D

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Product of no-rank is not

classified and have no

marking symbol for rank.