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2N2060 Datasheet(PDF) 2 Page - Semicoa Semiconductor

Part No. 2N2060
Description  Silicon NPN Transistor
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Maker  SEMICOA [Semicoa Semiconductor]
Homepage  http://www.semicoa.com/
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 2 page
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Copyright 2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N2060
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25 C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 30 mA
60
Volts
Collector-Emitter Breakdown Voltage
V(BR)CER IC = 10 mA, RBE = 10
80
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 100 Volts
VCB = 80 Volts
VCB = 80 Volts, TA = 150 C
10
2
10
A
nA
A
Collector-Emitter Cutoff Current
ICEO
VCE = xx Volts
A
Collector-Emitter Cutoff Current
ICEX
VCE = xx Volts, VEB = x Volts
A
Collector-Emitter Cutoff Current
ICES
VCE = xx Volts
nA
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 7 Volts
VEB = 5 Volts
10
2
A
nA
On Characteristics
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 10 A, VCE = 5 Volts
IC = 100 A, VCE = 5 Volts
IC = 1 mA, VCE = 5 Volts
IC = 10 mA, VCE = 5 Volts
IC = 100 A, VCE = 5 Volts
TA = -55 C
25
30
40
50
10
75
90
120
150
Base-Emitter Voltage Differential |VBE1 - VBE2|1
|VBE1 - VBE2|2
VCE = 5 Volts, IC = 100 A
VCE = 5 Volts, IC = 1 mA
5
mVolts
Base-Emitter Voltage Differential
change with temperature
|VBE1 - VBE2|1
|VBE1 - VBE2|2
VCE = 5 Volts, IC = 100 A
TA = 25 C and -55 C
VCE = 5 Volts, IC = 1 mA
TA = 25 C and +125 C
.8
1
mVolts




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