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2N2060L Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. 2N2060L
Description  UNITIZED DUAL NPN SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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2N2060, 2N2060L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 100 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
hFE
25
30
40
50
75
90
120
150
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
0.3
Vdc
Base-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
VBE(sat)
0.9
Vdc
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
hfe
3
25
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz
hib
20
30
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
hfe
50
150
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
hie
1,000
4,000
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
hoe
0
16
µmhos
Input Capacitance
VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
85
pF
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
15
pF
(3)Pulse Test: Pulse Width 250 to 350
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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