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2N2060L Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N2060L
Description  UNITIZED DUAL NPN SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
Qualified Level
2N2060
2N2060L
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N2060
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
500
mAdc
One
Section
Both
Sections
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
540
1.5
600
2.12
mW
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
1) Derate linearly 3.08 mW/
0C for TA > 250C for one section, 3.48 mW/0C for both sections
2) Derate linearly 8.6 mW/
0C for TC > 250C for one section, 12.1 mW/0C for both sections
TO-78*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(3)
RBE ≤ 10 Ω, IC = 10 mAdc
V(BR)CER
80
Vdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
V(BR)CEO
60
Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 80 Vdc
ICBO
10
2.0
µAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
IEBO
10
2.0
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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