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TSS4B01G Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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TSS4B01G Datasheet(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page CREAT BY ART - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength of 2000VRMS - Reliable low cost construction - UL Recognized File # E-326243 - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM V VRMS V VDC V IF(AV) A I 2tA2s Trr ns RθJC OC/W TJ OC TSTG OC Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. Document Number: DS_D1311039 Version: D13 Maximum reverse recovery time(Note 2) 35 50 Note 1: Pulse test with PW=300μs, 1% duty cycle PARAMETER SYMBOL TSS4B 01G TSS4B 02G TSS4B 03G TSS4B 04G UNIT 200 140 Typical thermal resistance 5.5 Operating junction temperature range - 55 to +150 1.3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM Storage temperature range - 55 to +150 Maximum instantaneous forward voltage (Note 1) @ 4 A VF V Maximum DC reverse current TJ=25 ℃ at rated DC blocking voltage TJ=125℃ IR 5 500 μA 0.98 150 A Rating for fusing (t<8.3ms) 93 Maximum DC blocking voltage 50 100 400 Maximum average forward rectified current 4 200 Maximum repetitive peak reverse voltage 50 100 400 Maximum RMS voltage 35 70 280 Mounting torque: 5 in-lbs maximum Weight: 4 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MECHANICAL DATA Case: TS4B Polarity: Polarity as marked on the body TS4B TSS4B01G thru TSS4B04G Taiwan Semiconductor Glass Passivated Bridge Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
Similar Part No. - TSS4B01G_16 |
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Similar Description - TSS4B01G_16 |
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