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S3K Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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S3K Datasheet(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page CREAT BY ART - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High current capability - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A trr μs CJ pF TJ °C TSTG °C Document Number: DS_D1410016 Version: K15 S3A - S3M 3A, 50V - 1000V Surface Mount Rectifiers FEATURES Moisture sensitivity level: level 1, per J-STD-020 Taiwan Semiconductor S3G S3J S3K S3M - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-214AB (SMC) DO-214AB (SMC) Polarity: Indicated by cathode band Weight: 0.21 g (approximately) UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL S3A S3B S3D Maximum average forward rectified current 3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A V IR μA Maximum instantaneous forward voltage (Note 1) IF= 3 A VF 1.15 10 250 Maximum reverse current @ rated VR Typical reverse recovery time (Note 2) 1.5 Typical thermal resistance RθJL RθJA 13 47 Typical junction capacitance (Note 3) 60 TJ=25°C TJ=125°C Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. °C/W Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle |
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