9

01.11.2003

Switching Transistors

BSR 15, BSR 16

Characteristics (T

Kennwerte (T

Min.

Typ.

Max.

- V

BSR 15

h

FE

35

–

–

BSR 16

h

FE

75

–

–

- V

BSR 15

h

FE

50

–

–

BSR 16

h

FE

100

–

–

- V

BSR 15

h

FE

75

–

–

BSR 16

h

FE

100

–

–

- V

BSR 15

h

FE

30

–

–

BSR 16

h

FE

50

–

–

- V

h

FE

100

–

300

- I

- V

CEsat

–

–

400 mV

- I

- V

CEsat

–

–

1.6 V

- I

- V

BEsat

–

–

1.3 V

- I

- V

BEsat

–

–

2.6 V

Gain-Bandwidth Product – Transitfrequenz

- V

f

T

200 MHz

–

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

C

CB0

–

8 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- V

C

EB0

–

30 pF

–

Switching times – Schaltzeiten

turn-on time

I

I

- I

t

on

–

–

40 ns

delay time

t

d

–

–

12 ns

rise time

t

r

–

–

30 ns

turn-off time

t

off

–

–

365 ns

storage time

t

s

–

–

300 ns

fall time

t

f

–

–

65 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

R

thA

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BSR 13, BSR 14

Marking - Stempelung

BSR 15 = T7

BSR 16 = T8