Electronic Components Datasheet Search |
|
SGB2233Z Datasheet(PDF) 1 Page - RF Micro Devices |
|
SGB2233Z Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 8 page Features 1 of 8 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS SGB-2233(Z) DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Dar- lington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB-2233 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 Ω and an exter- nal bias inductor choke is required for the application band. NC NC NC NC NC RFIN NC RFOUT Active Bias High Reliability SiGe HBT Technology Robust Class 1C ESD Simple and Small Size P1dB=6.7dBm at 1950MHz IP3=19.0dBm at 1950MHz Low Thermal Resistance=221C/W Applications 3V Battery Operated Applica- tions LO Buffer Amp RF Pre-Driver and RF Receive Path DS20160224 RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin SGB-2233(Z) DC to 4.5GHz Active Bias Gain Block Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 13.9 dB 850MHz 11.4 12.9 14.4 dB 1950MHz 12.5 dB 2400MHz Output Power at 1dB Compression 7.9 dBm 850MHz 5.2 6.7 dBm 1950MHz 6.4 dBm 2400MHz Output Third Order Intercept Point 20.5 dB 850MHz 16.5 19.0 dB 1950MHz 19.0 dB 2400MHz Noise Figure 4.2 5.2 dB 1950MHz Frequency of Operation DC 4500 MHz Input Return Loss 13.5 19.5 dB 1950MHz Output Return Loss 12.7 16.7 dB 1950MHz Current 21.0 25.0 29.0 mA Thermal Resistance 221 °C/W junction to backside Test Conditions: Z0=50Ω, VCC=3V, IC=25mA, T=30°C |
Similar Part No. - SGB2233Z |
|
Similar Description - SGB2233Z |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |