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BCX70 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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BCX70 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 1) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 2) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 57 01.11.2003 General Purpose Transistors BCX 70 Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) I C = 10 mA, IB = 0.25 mA V BEsat 600 mV – 850 mV I C = 50 mA, IB = 1.25 mA V BEsat 700 mV – 1050 mV DC current gain – Kollektor-Basis-Stromverhältnis 1) V CE = 5 V, IC = 10 :A BCX 70G h FE ––– BCX 70H h FE 30 – – BCX 70J h FE 40 – – BCX 70K h FE 100 – – V CE = 5 V, IC = 2 mA BCX 70G h FE 120 – 220 BCX 70H h FE 180 – 310 BCX 70J h FE 250 – 460 BCX 70K h FE 380 – 630 V CE = 1 V, IC = 50 mA BCX 70G h FE 50 – – BCX 70H h FE 70 – – BCX 70J h FE 90 – – BCX 70K h FE 100 – – Base-Emitter voltage – Basis-Emitter-Spannung 1) V CE = 5 V, IC = 10 :AV BEon – 520 mV – V CE = 5 V, IC = 2 mA V BEon 550 mV 650 mV 700 mV V CE = 1 V, IC = 50 mA V BEon – 780 mV – Gain-Bandwidth Product – Transitfrequenz V CE = 5 V, IC = 10 mA, f = 100 MHz f T 100 MHz 250 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität V CB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 1.7 pF – Emitter-Base Capacitance – Emitter-Basis-Kapazität V EB = 0.5 V, IC = ic = 0, f = 1 MHz C EB0 – 11 pF – Noise figure – Rauschzahl V CE = 5 V, IC = 200 :A, R G = 2 k S, f = 1 kHz, )f = 200 Hz F – 2 dB 6 dB Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft R thA 420 K/W 2) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BCX 71 series Marking Stempelung BCX 70G = AG BCX 70H = AH BCX 70J = AJ BCX 70K = AD |
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