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NJ7N60 Datasheet(PDF) 3 Page - Nanjing International Group Co |
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NJ7N60 Datasheet(HTML) 3 Page - Nanjing International Group Co |
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3 / 7 page  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 A 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 1 A Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient BVDSS TJ ID=250 A,Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 A 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A 7N60 0.83 1.0 7N60-F 0.93 1.2 7N60-M 0.93 1.2 7N60-Q 0.93 1.2 7N60-R 0.93 1.2 DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 1400 pF Output Capacitance COSS 180 pF Reverse Transfer Capacitance CRSS 16 21 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD =300V, ID =7.4A, RG =25 (Note 1, 2) 70 ns Turn-On Rise Time tR 170 ns Turn-Off Delay Time tD(OFF) 140 ns Turn-Off Fall Time tF 130 ns SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, ID=7.4A, VGS=10V (Note 1, 2) 29 38 nC Gate-Source Charge QGS 7 nC Gate-Drain Charge QGD 14.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 29.6 A Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, dIF / dt = 100A/ s (Note 1) 320 ns Reverse Recovery Charge QRR 2.4 C Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2% 2. Essentially independent of operating temperature CLASSIFICATION OF RDS(ON) RANK - F A D L VALUE 1.0 1.2 1.2 1.2 1.2 NJ7N60 POWER MOSFET |
Similar Part No. - NJ7N60 |
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Similar Description - NJ7N60 |
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