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NJ6N60-LI Datasheet(PDF) 3 Page - Nanjing International Group Co |
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NJ6N60-LI Datasheet(HTML) 3 Page - Nanjing International Group Co |
3 / 6 page ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 A 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 A Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient BVDSS/ TJ ID=250 A, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 A 2.0 4.0 V Static Drain-Source On-State Resistance 6N60 RDS(ON) VGS = 10V, ID = 3.1A 1.0 1.5 6N60-P 1.0 1.5 DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 770 1000 pF Output Capacitance COSS 95 120 pF Reverse Transfer Capacitance CRSS 10 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=300V, ID =6.2A, RG =25 (Note 1, 2) 20 50 ns Turn-On Rise Time 6N60 tR 70 150 ns 6N60-P 60 100 ns Turn-Off Delay Time tD(OFF) 40 90 ns Turn-Off Fall Time 6N60 tF 80 100 ns 6N60-P 70 100 ns Total Gate Charge QG VDS=480V, ID=6.2A, VGS=10 V (Note 1, 2) 20 25 nC Gate-Source Charge QGS 4.9 nC Gate-Drain Charge QGD 9.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 6.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 24.8 A Reverse Recovery Time trr VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/ s (Note 1) 290 ns Reverse Recovery Charge QRR 2.35 C Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2% 2. Essentially independent of operating temperature NJ6N60 POWER MOSFET |
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