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NJ4N65D-TR Datasheet(PDF) 3 Page - Nanjing International Group Co |
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NJ4N65D-TR Datasheet(HTML) 3 Page - Nanjing International Group Co |
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3 / 7 page  ELECTRICAL CHARACTERISTICS (TC =25° , unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 A 650 V Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V 10 A Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA Reverse VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BVDSS/ TJ ID=250 A, Referenced to 25°C 0.6 V/° ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 A 2.0 4.0 V Static Drain-Source On-State Resistance 4N65 RDS(ON) VGS = 10 V, ID = 2.2A 2.4 2.5 4N65-E 2.4 2.5 4N65-N 2.9 3.1 4N65-Q 2.9 3.1 DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0V, f = 1MHz 520 670 pF Output Capacitance COSS 70 90 pF Reverse Transfer Capacitance CRSS 8 11 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDS = 325V, ID = 4.0A, RG = 25 (Note 1, 2) 13 35 ns Turn-On Rise Time 4N65 tR 70 100 ns 4N65-E 60 100 4N65-N 70 100 4N65-Q 45 100 Turn-Off Delay Time tD(OFF) 25 60 ns Turn-Off Fall Time 4N65 tF 100 120 ns 4N65-E 70 120 4N65-N 100 120 4N65-Q 35 120 Total Gate Charge QG VDS= 520V,ID= 4.0A, VGS= 10V (Note 1, 2) 15 20 nC Gate-Source Charge QGS 3.4 nC Gate-Drain Charge QGD 7.1 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A Reverse Recovery Time trr VGS = 0V, IS = 4.4A, dIF/dt = 100 A/ s (Note 1) 250 ns Reverse Recovery Charge QRR 1.5 C Note: 1. Pulse Test: Pulse width 300 s, Duty cycle 2% 2. Essentially independent of operating temperature NJ4N65 POWER MOSFET |
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