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CGA-3318Z Datasheet(PDF) 2 Page - RF Micro Devices

Part # CGA-3318Z
Description  DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

CGA-3318Z Datasheet(HTML) 2 Page - RF Micro Devices

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DS120502
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-3318Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)225
mA
Max Device Voltage (VD)
6
V
Max RF Input Power
+18
dBm
Max Junction Temp (TJ)
+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Max Storage Temp
+150
°C
ESD Rating - Human Body Model
(HBM)
1B
Class
Moisture Sensitivity Level
3
MSL
*Note: Load condition1, ZL=50. Load condition2, ZL=10:1 VSWR.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Worst Case Over Band, CSO
70
dBc
79 Ch., Flat, +34dBmV
Worst Case Over Band, CTB
68
dBc
79 Ch., Flat, +34dBmV
Worst Case Over Band, XMOD
63
dBc
79 Ch., Flat, +34dBmV
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical RF Performance: V
S=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Configuration
Gain vs. Frequency
6
8
10
12
14
16
0
100
200
300
400
500
600
700
800
900 1000
Frequency (MHz)
+25°C
-40°C
+85°C
Input Return Loss vs. Frequency
-30
-25
-20
-15
-10
-5
0
0
100
200
300
400
500
600
700
800
900 1000
Frequency (MHz)
+25°C
-40°C
+85°C
Output Return Loss vs. Frequency
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0
100
200
300
400
500
600
700
800
900 1000
Frequency (MHz)
+25°C
-40°C
+85°C


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