August 2015

2

1

3

V

I

F

= 2 x 5A

t

rr

= 19nS

TO-220F

HDS10U20AW

Ultra Fast Recovery Diode

Features

Low forward drop voltage

Dual common cathode rectifier construction

Ultrafast recovery time and high speed switching

General Description

The HDS10U20AW is ideally as boost diode in discontinuous or critical

mode power factor corrections.

The planar structure and the platinum doper life time control guarantee the

best overall performance, ruggedness reliability characteristics. The device

is also intended for use as a freewheeling diode in power supplies and

other power switching applications.

Thermal Resistance Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V

F

Forward Voltage

I

--

0.88

0.98

V

I

R

Reverse Current

V

--

--

5

uA

V

--

--

200

t

rr

Reverse Recovery Time

I

--

17

25

ns

C

j

Junction Capacitance

V

--

32

--

pF

Symbol

Parameter

Typ.

Max.

Unit

R

JC

Junction-to-Case (Per Diode)

--

4.0

/W

Symbol

Parameter

Value

Unit

V

RRM

Peak Repetitive Reverse Voltage

200

V

V

R

DC Blocking Voltage

I

F(AV)

Average Rectifier Forward Current

(Per Diode)

(Total Diode)

5

10

A

I

FSM

Non-Rectifier Peak Surge Current @8.3ms

(Per Diode)

120

A

T

Operating and Storage Temperature Range

-45 to +150

1

2

3

Pin 1, 3 : Anode

Pin 2 : Cathode