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IS61QDP2B21M36A2 Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc |
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IS61QDP2B21M36A2 Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc |
10 / 33 page IS61QDP2B22M18A/A1/A2 IS61QDP2B21M36A/A1 /A2 Integrated Silicon Solution, Inc.- www.issi.com Rev. B 10/02/2014 10 State Diagram Power-Up Read NOP Write NOP Load New Read Address Load New Write Address DDR Read DDR Write Read# Write# Read Write Read Write Always (fixed) Always (fixed) Write# Read# Notes: 1. Internal burst counter is fixed as two-bit linear; that is when first address is A0+0, next internal burst addresses are A0+1. 2. Read refers to read active status with R# = LOW. Read# refers to read inactive status with R# = HIGH. 3. Write refers to write active status with W# = LOW. Write# refers to write inactive status with W# = HIGH. 4. The read and write state machines can be active simultaneously. 5. State machine control timing sequence is controlled by K. |
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