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DRV5013-Q1

SLIS162B – DECEMBER 2014 – REVISED FEBRUARY 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Ensured by design. Only tested to –20 V.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Power supply voltage

40

V

Unlimited

V/µs

0

2

Output pin voltage

–0.5

40

V

Output pin reverse current during reverse supply condition

0

100

mA

Unlimited

Q, see Figure 23

–40

150

°C

E, see Figure 23

–40

175

–65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2500

V

Charged-device model (CDM), per AEC Q100-011

±500

(1)

Power dissipation and thermal limits must be observed

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Power supply voltage

2.7

38

V

Output pin voltage (OUT)

0

38

V

0

30

mA

Operating ambient

temperature

Q, see Figure 23

–40

125

°C

E, see Figure 23

–40

150

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

DRV5013-Q1

UNIT

DBZ (SOT-23)

LPG (TO-92)

3 PINS

3 PINS

Junction-to-ambient thermal resistance

333.2

180

°C/W

Junction-to-case (top) thermal resistance

99.9

98.6

°C/W

Junction-to-board thermal resistance

66.9

154.9

°C/W

Junction-to-top characterization parameter

4.9

40

°C/W

Junction-to-board characterization parameter

65.2

154.9

°C/W