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IS42VS16100E-75BL Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc |
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IS42VS16100E-75BL Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc |
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6 / 81 page  IS42VS16100E 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00E 01/21/2011 DCELECTRICALCHARACTERISTICS(RecommendedOperationConditionsunlessotherwisenoted.) Continuedonnextpage. Symbol Parameter TestCondition Min. Max. Unit iil InputLeakageCurrent 0V≤Vin≤VDD,withpinsotherthan –1.0 1.0 µA thetestedpinat0V iOl OutputLeakageCurrent Outputisdisabled,0V≤VOut≤VDD –1.5 1.5 µA VOh OutputHighVoltageLevel(1) iOh=–0.1mA 0.9xVDDq — V VOl OutputLowVoltageLevel(1) iOl=0.1mA — 0.2 V DCELECTRICALCHARACTERISTICS(4)(RecommendedOperationConditionsunlessotherwisenoted.) Symbol Parameter TestCondition Speed Min. Max. Unit icc1 OperatingCurrent(1,2) OneBankOperation, CASLatency=3 -7.5 — 45 mA BurstLength=1 -10 — 35 mA trc≥trc(min.) CAS Latency=2 -7.5 — 50 mA IOut=0mA -10 — 40 icc2p PrechargeStandbyCurrentCKE≤Vil(max) tck=10ns — — 0.3 mA (InPower-DownMode) Icc2ps PrechargeStandbyCurrent CKE≤Vil(max) tck = ∞ — — 0.3 mA (InPower-DownMode) CLK≤Vil(max) icc2n ActiveStandbyCurrent(3) CKE≥Vih(min) tck=10ns — — 6 mA (InNonPower-DownMode) CS ≥Vih(min), Icc2ns ActiveStandbyCurrent CKE≥Vih(min) tck = ∞ — — 2 mA (InNonPower-DownMode) Inputsarestable icc3P ActiveStandbyCurrent CKE≤Vil(max) tck=10ns — — 6 mA (InNonPower-DownMode) Icc3Ps ActiveStandbyCurrent CKE≤Vil(max) tck = ∞ — — 5 mA (InNonPower-DownMode) CLK≤Vil(max) icc3n ActiveStandbyCurrent(3) CKE≥Vih(min) tck=10ns — — 12 mA (InNonPower-DownMode) CS ≥Vih(min) Icc3ns ActiveStandbyCurrent CKE≥Vih(min) tck = ∞ — — 10 mA (InNonPower-DownMode) CLK≤Vil(max) Inputsarestable icc4 OperatingCurrent tck=tck(min) CAS latency=2,3 -7.5 — 60 mA (InBurstMode)(1,3) IOut =0mA -10 — 50 mA PageBurst BothBanksactivated icc5 Auto-RefreshCurrent trc=trc (min) CAS latency=2,3 -7.5 — 40 mA -10 — 40 mA icc6 Self-RefreshCurrent CKE≤0.2V — — 180 µA icc7 DeepPowerDownCurrent CKE≤0.2V — — 10 µA Notes: 1.Thesearethevaluesattheminimumcycletime.Sincethecurrentsaretransient,thesevaluesdecreaseasthecycletimein- creases.Alsonotethatabypasscapacitorofatleast0.01µFshouldbeinsertedbetweenVDD andVssforeachmemorychip tosuppresspowersupplyvoltagenoise(voltagedrops)duetothesetransientcurrents. 2.Icc1andIcc4dependontheoutputload.ThemaximumvaluesforIcc1andIcc4areobtainedwiththeoutputopenstate. 3.Inputschangedonceeverytwoclocks. 4.Notallparametersaretestedatthewaferlevel,buttheparametershavebeenpreviouslycharacterized. |
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