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IS42S16320D Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS42S16320D
Description  Internal bank for hiding row access/precharge
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42S16320D Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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IS42/45R86400D/16320D/32160D
IS42/45S86400D/16320D/32160D
Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. A
08/29/2012
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such ap-
plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fullysynchronous;allsignalsreferencedtoa
positive clock edge
• Internalbankforhidingrowaccess/precharge
• Powersupply:Vdd/Vddq = 2.3V-3.6V
IS42/45SxxxxxD-Vdd/Vddq = 3.3V
IS42/45RxxxxxD-Vdd/Vddq = 2.5
• LVTTLinterface
• Programmableburstlength
– (1, 2, 4, 8, full page)
• Programmableburstsequence:
Sequential/Interleave
• AutoRefresh(CBR)
• SelfRefresh
• 8Krefreshcyclesevery64ms
• Randomcolumnaddresseveryclockcycle
• ProgrammableCAS latency (2, 3 clocks)
• Burstread/writeandburstread/singlewrite
operations capability
• Burstterminationbyburststopandprecharge
command
• Packages:
x8/x16:54-pinTSOP-II,54-ballTF-BGA(x16only)
x32:90-ballTF-BGA
• TemperatureRange:
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
Automotive, A1 (-40oC to +85oC)
Automotive, A2 (-40oC to +105oC)
16Mx32, 32Mx16, 64Mx8
512Mb SDRAM
SEPTEMBER 2012
KEY TIMING PARAMETERS
Parameter
-5
-6
-7
Unit
ClkCycleTime
CAS
Latency=3
5
6
7
ns
CAS
Latency=2
10
10
7.5
ns
ClkFrequency
CAS
Latency=3
200
167
143
Mhz
CAS
Latency=2
100
100
133
Mhz
AccessTimefromClock
CAS
Latency=3
5.0
5.4
5.4
ns
CAS
Latency=2
6
6
5.4
ns
ADDRESS TABLE
Parameter
16M x 32
32M x 16
64M x 8
Configuration
4M x 32 x 4
banks
8M x 16 x 4
banks
16M x 8 x 4
banks
BankAddress
Pins
BA0,BA1
BA0,BA1
BA0,BA1
Autoprecharge
Pins
A10/AP
A10/AP
A10/AP
Row Address
8K(A0–A12) 8K(A0–A12) 8K(A0–A12)
Column
Address
512(A0 – A8)
1K(A0–A9)
2K(A0–A9,
A11)
Refresh Count
Com./Ind./A1
A2
8K/64ms
8K/16ms
8K/64ms
8K/16ms
8K/64ms
8K/16ms
PACKAGE INFORMATION
IS42/45S32160D
IS42/45R32160D
IS42/45S16320D
IS42/45R16320D
IS42/45S86400D
IS42/45R86400D
4M x 32 x 4
banks
8M x 16 x 4
banks
16M x 8 x 4
banks
90-ballTF-BGA
54-pinTSOP-II
54-ballTF-BGA
54-pinTSOP-II
DEVICE OVERVIEW
ISSI's 512Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The512MbSDRAMisorganizedasfollows.


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