CMS30I30A

1

Schottky Barrier Diode

CMS30I30A

CMS30I30A

CMS30I30A

CMS30I30A

Start of commercial production

2010-10

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

Secondary Rectification in Switching Regulators

•

Reverse-Current Protection in Mobile Devices

2.

2.

2.

2. Features

Features

Features

Features

(1)

(2)

(3)

(4)

Small, thin package suitable for high-density board assembly

3.

3.

3.

3. Packaging and Internal Circuit Pin Assignment

Packaging and Internal Circuit Pin Assignment

Packaging and Internal Circuit Pin Assignment

Packaging and Internal Circuit Pin Assignment

3-4E1S

1: Anode

2: Cathode

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25





))))

Characteristics

Repetitive peak reverse voltage

Average forward current

Non-repetitive peak forward surge current

Junction temperature

Storage temperature

Symbol

Note



(Note 1)

(Note 2)



Rating

30

3.0

30

150

-55 to 150

Unit

V

A



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: f = 50 Hz, half-sine wave

2014-01-24

Rev.3.0