1

Bumped GaAs SP3T Switch for WLAN

1.0 - 4.0 GHz

Rev. V2

MASW-009276-001DIE

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Features

 802.11b/g and Bluetooth Applications

 Low Insertion Loss:

0.5 dB 2.4 GHz to 2.5 GHz band

 Low Harmonics: <-70 dBc @ 20 dBm

 Flip-chip configuration

 RoHS* Compliant

Description

The MASW-009276-001DIE is a bumped GaAs

pHEMT MMIC SP3T switch. Typical applications are

WLAN (802.11 b/g) and Bluetooth applications.

The

MASW-009276-001DIE

delivers

high

isolation, low insertion loss, and high linearity at

2.4 - 2.5 GHz. This device is fabricated using a

0.5 micron gate length GaAs pHEMT process.

The

process

features

full

passivation

for

performance and reliability.

This die features

SnAg(3.5%)Cu(1%) solder bumps for Wafer Level

Chip Scale Package (WLCSP) applications.

*

Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

Ordering Information

Part Number

Package

MASW-009276-001D3K

Die in 3000 piece reel

MASW-009276-002SMB

Sample Board SP3T

Die Bump Pad Layout (bump side up)

Die Bump Pad Configuration

Name

Description

Voltage Control 1

BT

GND

Ground

Voltage Control 3

Voltage Control 2

RFC

Antenna Port

Parameter

Absolute Maximum

Input Power @ 3 V Control

+32 dBm

Input Power @ 5 V Control

+35 dBm

Operating Voltage

+8 volts

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

1. Exceeding any one or combination of these limits may cause

permanent damage to this device.

2. M/A-COM Technology does not recommend sustained

operation near these survivability limits.