3

HMIC PIN Diode Variable Attenuator

0.8 - 1.0 GHz

Rev. V3

MA4VAT900-1277T

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Plots of Typical RF Characteristics @ +25 °C

Typical Return Loss @ All Attenuation Levels

Typical IIP3 vs Attenuation

Typical Attenuation vs Voltage (@900 MHz)

Typical Insertion Loss & Attenuation

Typical Relative Phase Shift Per Attenuation (Voltage)

For Reference ONLY:

With 0

 External Bias Resistor, the following are

Approximate Values:

 Insertion Loss

= 0 V @ 0 uA

 5dB Attenuation

= 0.76 V @ 49 uA

 10dB Attenuation = 1.05 V @ 125uA

 15dB Attenuation = 1.30 V @ 185 uA

 20dB Anttenuation = 1.50 V @ 240 uA

 Max Attenuation

= 1.8 V @ 330 uA

Typical InsertionLoss& Attenuationfor MA4VAT900-1277

-30

-25

-20

-15

-10

-5

0

0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0

Frequency(GHz)

0V/0uA

0.76V/49uA

1.05V/125uA

1.30V/185uA

1.50V/240uA

1.80V/330uA

Typical Attenuationvs Volatge for MA4VAT900-1277

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

Voltage Applied(V)

Typical IP3 vs Attenuation for MA4VAT900-1277

0

10

20

30

40

50

0

3

6

9

12

15

18

21

24

27

Attenuation (dB)

800Mhz

900MHz

1000MHz

Typical Relativephaseshift vsFrequency per Voltage(Attenuation)

for MA4VAT900-1277

-120

-100

-80

-60

-40

-20

0

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Frequency(GHz)

0V

0.76V

1.05V

1.30V

1.50V

1.80V

Typical ReturnLossat Attenuationlevelsfor MA4VAT900-1277

-30

-25

-20

-15

-10

-5

0

0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0

Frequency (GHz)

0V/0uA

0.76V/49uA

1.05V125uA

1.30V185uA

1.50V/240uA

1.80V330uA