Power Amplifier

27.0-32.0 GHz

Rev. V1

XP1026-BD

1

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Features

 Ka-Band 2W Power Amplifier

 21.0 dB Small Signal Gain

 +33.0 dBm Saturated Output Power

 +40.0 dBm Output Third Order Intercept (OIP3)

 100% On-Wafer RF, DC and Output Power

Testing

 100% Visual Inspection to MIL-STD-883 Method

2010

 RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s three stage 27.0-32.0 GHz GaAs

MMIC power amplifier has a small signal gain of

21.0 dB with +33 dBm saturated output power. This

MMIC uses M/A-COM Tech’s GaAs PHEMT device

model technology, and is based upon electron beam

lithography to

ensure

high

repeatability

and

uniformity. The chip has surface passivation to

protect and provide a rugged part with backside via

holes and gold metallization to allow either a

conductive epoxy or eutectic solder die attach

process. This device is well suited for Millimeter-

wave Point-to-Point Radio, LMDS, SATCOM and

VSAT applications.

Ordering Information

Part Number

Package

XP1026-BD-000V

“V” - vacuum release

gel paks

Absolute Maximum Ratings

Parameter

Absolute Max.

Supply Voltage (Vd)

Supply Current (Id1,2,3)

165,415,790 mA

Gate Bias Voltage (Vg)

+0.3 VDC

Input Power (Pin)

+22 dBm

Storage Temperature (Tstg)

-65 °C to +165 °C

Operating Temperature (Ta)

-55 °C to +85 °C

175 °C

1. Channel temperature directly affects a device's MTTF. Chan-

nel temperature should be kept as low as possible to maximize

lifetime.

2. Under pulsed bias conditions, under CW Psat conditions fur-

ther reduction in max supply voltage (~0.5V) is recommended.

Chip Device Layout