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XB1008-QT-0G0T Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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XB1008-QT-0G0T Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 6 page Buffer Amplifier 10 - 21 GHz Rev. V2 XB1008-QT 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 2 Electrical Specifications: 10 - 21 GHz, TA = +25°C Parameter Units Min. Typ. Max. Input Return Loss (S11) dB — 12 — Output Return Loss (S22) dB — 12 — Small Signal Gain (S21) dB — 17 — Gain Flatness (ΔS21) dB — +/-2 — Reverse isolation (S12) dB — 65 — Noise Figure dB — 4.5 — Output Power for 1dB Compression Point (P1dB) dBm — 18 — Saturated Output Power (PSAT) dBm — 20 — Output Third Order Intercept dBm — 32 — Drain Bias Voltage (VD) VDC — 4 4 Gate Bias Voltage (VG) VDC -1.0 -0.23 -0.1 Supply Current (ID) (VD = +4.0 V, VG2 = -0.5 V Typical) mA — 100 130 Absolute Maximum Ratings3 Parameter Absolute Maximum Supply Voltage 4.3 VDC Supply Current 180 mA Gate Bias Voltage 0 V Input Power 20 dBm Storage Temperature -65°C to +165°C Operating Temperature -55°C to +85°C Channel Temperature 150°C 3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices, MM Class A devices. |
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